Dahua 512GB NVMe M.2 PCIe Gen 3.0 x4 2230 SSD (DHI-SSD-C900NVE512G)

The Dahua DHI-SSD-C900NVE512G is a high-performance 512GB NVMe M.2 2230 SSD engineered for ultra-compact devices such as ultrabooks, handheld gaming consoles, and mini PCs. Built on a PCIe Gen 3.0 x4 interface, it delivers fast read and write speeds of up to 3400MB/s and 3000MB/s respectively, ensuring quick boot times, seamless multitasking, and efficient data transfers. Its compact 2230 form factor makes it ideal for space-constrained systems without compromising on speed, reliability, or power efficiency.

Product Features

Ultra-Fast NVMe Performance

Experience high-speed data access with sequential read speeds of up to 3400MB/s and write speeds of up to 3000MB/s, allowing faster application launches, file transfers, and system responsiveness.

Compact M.2 2230 Form Factor

Designed with a small footprint of 22mm x 30mm, this SSD fits perfectly into compact devices such as handheld gaming consoles and ultrathin laptops.

Advanced 3D TLC NAND Technology

Equipped with high-quality 3D TLC NAND flash memory, the drive ensures improved durability, efficiency, and consistent performance over time.

Reliable Data Protection Features

Supports advanced technologies such as TRIM, S.M.A.R.T monitoring, and LDPC ECC error correction to enhance data integrity and extend the lifespan of the drive.

Optimized Power Efficiency

Low power consumption design with approximately 2.5W to 3.5W during active use and 0.3W in idle mode, making it ideal for battery-powered devices.

Enhanced Performance with SLC Caching

Integrated SLC caching technology boosts burst write speeds and maintains performance during large file transfers.

Built for Durability and Longevity

With an endurance rating of 300 TBW and a mean time between failures of 1.5 million hours, the SSD is designed for long-term reliable use.

Product Specifications

• Capacity: 512GB
• Form Factor: M.2 2230
• Interface: PCIe Gen 3.0 x4, NVMe 1.3/1.4
• Sequential Read Speed: Up to 3400MB/s
• Sequential Write Speed: Up to 3000MB/s
• Random Read (4K): Up to 300,000 IOPS
• Random Write (4K): Up to 400,000 IOPS
• NAND Type: 3D TLC NAND Flash
• Cache: SLC Caching Supported
• Endurance: 300 TBW
• MTBF: 1.5 million hours
• Power Consumption (Active): Approx. 2.5W to 3.5W
• Power Consumption (Idle): Approx. 0.3W
• Operating Temperature: 0°C to +70°C
• Storage Temperature: -40°C to +85°C
• Shock Resistance: 1500G / 0.5 ms
• Vibration Resistance: 10–200 Hz, 0.5G
• Dimensions: 30mm x 22mm x 3.5mm
• Weight: Approx. 8g
• Error Correction: 4K LDPC ECC
• Supported Features: TRIM, S.M.A.R.T Monitoring