Samsung 8GB DDR5 5600MHz Laptop RAM (M425R1GB4BB0-CWM)

The Samsung 8GB DDR5 5600MHz Laptop RAM (M425R1GB4BB0-CWM / M425R1GB4PB0-CWM) is a next-generation high-speed memory module designed for modern DDR5-compatible laptops. Operating at 5600 MT/s (PC5-44800), it delivers significantly higher bandwidth and improved efficiency compared to previous DDR4 technology, enhancing system responsiveness, multitasking performance, and overall computing speed. Built using advanced DDR5 architecture and manufactured on Samsung’s optimized process technology, this 8GB SO-DIMM module features enhanced power management, improved signal integrity, and on-die error correction for greater stability. With its low 1.1V operating voltage and integrated power management, it provides energy-efficient performance suitable for high-performance laptops used for productivity, content creation, and advanced multitasking.

Product Features

High-Speed DDR5 5600MHz Performance

Operating at 5600 MT/s (PC5-44800), this module provides up to 44.8 GB/s bandwidth, delivering faster data processing, improved application performance, and reduced system bottlenecks compared to DDR4 memory.

Enhanced Multitasking Capability

The 8GB capacity supports smooth operation across multiple applications, including productivity tools, web browsing, streaming, and professional software, improving overall system efficiency.

Advanced DDR5 Architecture

Featuring a dual 32-bit subchannel design and a 32-bank structure, this memory improves data access efficiency, reduces latency bottlenecks, and enhances performance in multi-threaded workloads.

On-Die Error Correction (ODECC)

Integrated error correction within the memory chip helps improve data reliability and system stability, particularly during intensive computing tasks and prolonged usage.

Integrated Power Management (PMIC)

The on-module Power Management Integrated Circuit ensures precise voltage regulation directly on the memory module, contributing to improved power efficiency and stable operation.

Energy-Efficient 1.1V Operation

Operating at 1.1V, this module consumes less power than DDR4 equivalents, helping extend laptop battery life while maintaining high performance levels.

Decision Feedback Equalization (DFE) Technology

Advanced signal processing improves data signal clarity at higher frequencies, ensuring stable performance at 5600MHz speeds.

JEDEC-Compliant Plug-and-Play Design

Built to JEDEC standards, the module is designed for automatic recognition in compatible DDR5 laptops without requiring manual BIOS configuration or performance tuning.

Optimized for Modern High-Performance Laptops

Compatible with recent DDR5-enabled systems, including platforms powered by advanced Intel and AMD processors, making it suitable for professional workloads, gaming, and creative applications.

Product Specifications

• Model Numbers: M425R1GB4BB0-CWM / M425R1GB4PB0-CWM
• Capacity: 8GB (Single Module)
• Memory Type: DDR5 SDRAM
• Speed: 5600 MT/s (PC5-44800)
• CAS Latency: CL46 (46-45-45)
• Form Factor: 262-Pin SO-DIMM
• Operating Voltage: 1.1V
• Rank: 1Rx16 (Single Rank)
• Organization: (1G x 16) x 4
• Error Correction: Non-ECC Unbuffered with On-Die ECC
• Manufacturing Process: Advanced Samsung process technology
• Operating Temperature: 0°C to 85°C
• Compatibility: DDR5-enabled laptops and supported mobile platforms
• Standards Compliance: JEDEC Compliant